Free-running InGaAs/InP avalanche photodiode with active quenching for single photon counting at telecom wavelengths

Authors:R T Thew, D Stucki, J D Gautier, H Zbinden, A Rochas
Journal:Applied Physics Letters 91, 201114 (2007)
DOI:http://dx.doi.org/10.1063/1.2815916
Abstract:We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an application specific integrated circuit (ASIC) that is capable of operating in both gated and free-running modes. The 1.6 mm(2) ASIC chip is fabricated using complementary metal oxide semiconductor technology guaranteeing long-term stability, reliability, and compactness. In the free-running mode, we find a single photon detection efficiency of 10% with < 2 kHz of noise. © 2007 American Institute of Physics.
File:freeingaasapl.pdf

BibTeX Source

@ARTICLE{Thew2007,
  author = {Thew, R. T. and Stucki, D. and Gautier, J. D. and Zbinden, H. and
	Rochas, A.},
  title = {Free-running InGaAs/InP avalanche photodiode with active quenching
	for single photon counting at telecom wavelengths},
  journal = {Applied Physics Letters},
  year = {2007},
  volume = {91},
  pages = {201114},
  abstract = {We present an InGaAs/InP avalanche photodiode with an active quenching
	circuit on an application specific integrated circuit (ASIC) that
	is capable of operating in both gated and free-running modes. The
	1.6 mm(2) ASIC chip is fabricated using complementary metal oxide
	semiconductor technology guaranteeing long-term stability, reliability,
	and compactness. In the free-running mode, we find a single photon
	detection efficiency of 10% with < 2 kHz of noise. (c) 2007 American
	Institute of Physics. },
  doi = {10.1063/1.2815916},
  owner = {cc},
  sn = {0003-6951},
  timestamp = {2010.08.20},
  ut = {WOS:000251003500014}
}