In its latest issue, Nature publishes an article by Prof. J.-M. Triscone from the Physics Section of the University of Geneva. Written in collaboration with American and German researchers from the prestigious Universities of Yale and Augsburg, this paper reports on the most recent developments of novel field effect transistors based on complex oxides. This "hot" subject, actively studied in the National Center of Competence in Research (NCCR) MaNEP, may lead to precursors of future electronic devices. This international collaboration shows the active role played by Geneva scientists in advanced research fields such as the physics of novel materials.

The field effect transistor is at the heart of modern electronics, used in the billions of switches produced every year to run our computers, cars and portable phones. Currently based on silicon, this device works by application of an electric field which modifies the electrical resistance of a semiconductor channel.

In this area of research, the article by Profs C.H. Ahn from Yale University, J.-M. Triscone from the University of Geneva, and J. Mannhart from Augsburg University, published in the latest issue of Nature, describes the efforts being made to realize field effect transistors using novel materials. In particular, it describes how transistors based on more complex materials, such as oxide superconductors or manganites, may lead to spectacular effects and new devices, such as magnetic and superconducting switches, nano-transistors, or new memory structures.

Developments in the electronic world, which functions today at a scale of a millionth of a millimeter, are difficult but promising. In the long term, this type of research aims to further develop the speed and power of our computers which are starting to reach fundamental limits. More powerful computers will be useful for complex problems met in spatial research, meteorological forecasting, sophisticated image treatments, and the search for new materials.

Started at the end of the 80s, field effect experiments in oxides are today actively pursued in many laboratories around the world and, in particular, in Geneva, in the framework of the National Center of Competence in Research MaNEP where pioneering experiments using the ferroelectric field effect have been realized. These last results might be signs of a revolution in which the University of Geneva, trough the research and collaborations of its NCCR MaNEP, will certainly participate.

For more information, do not hesitate to contact:
Jean-Marc Triscone - Phone +41 22 379 68 27

Geneva, 3 september 2003